関連する実験動画

Updated: May 11, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

双極薄膜トランジスタとインバーター回路は,混合次元二重層ヘテロ構造に基づいています

Sujin Baek1, Suhyeon Kim1, Hye Young Lee2

  • 1Department of Electrical Engineering, Sookmyung Women's University, Seoul, 04312, Republic of Korea.

Scientific reports
|February 19, 2026
PubMed
まとめ

研究者らは,モリブデン二硫化物 (MoS2) と単一壁の炭素ナノチューブ (SWCNTs) を使用して補完回路を製造するためのより単純な方法を開発しました. このアプローチは,複雑なパターニングステップなしで,高度な電子機器のスケーラブルな生産を可能にします.

キーワード:
アンビポラートランジスタ (Ambipolar Transistor) とは互補型の回路です.インクジェット印刷はインクジェット印刷です.ミックス・ディメンショナル・ヘテロ構造.印刷された電子機器

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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