関連する実験動画
Updated: Jun 20, 2026

13:39
Optical Trapping of Nanoparticles
Published on: January 15, 2013
バックサイド照明のGe-on-Si単フォトンの雪崩ダイオードのシミュレーションで,光を捕捉する構造を持つ
Optics express
|February 20, 2026
まとめ
私たちは,光を捕捉する構造を持つ,新しいバックサイド照明されたゲルマニウム・オン・シリコン・シングルフォトン・アヴァランチ・ダイオード (SPAD) を開発しました. この設計は,高度なイメージングアプリケーションの短波赤外線 (SWIR) 検出効率を大幅に高めます.
科学分野:
- オプトエレクトロニクス (光電子機器)
- 半導体デバイス 半導体デバイス
- フォトニクス フォトニクスとは
背景:
- ゲルマニウム・オン・シリコン単光子・アヴァランチ・ダイオード (SPAD) は,短波赤外線 (SWIR) 検出のためのCMOS互換性を提供します.
- 現在のGe-on-Si SPADは,デバイスの構造により,1310 nmと1550 nmの検出効率に制限があります.
研究 の 目的:
- バックサイドイルミネート (BSI) のGe-on-Si SPADを,統合されたライトトラップ構造で提案し,評価する.
- 重要なSWIR波長での単光子検出効率 (SPDE) を向上させるため.
主な方法:
- ナノ構造物の設計最適化のために,有限差時間領域 (FDTD) とTCADシミュレーションを使用した.
- 基板の背面にナノコーン配列と,前面にアルミニウム反射器を実装しました.
- 電場分布を制御するためにマスクされたインプラント技術を使用した.
主要な成果:
- 1310 nmで37.7%,1550 nmで21.2%のSPDEを達成しました.
- 室温でダークカウントレート (DCR) の61.2%の減少を示した.
- 低温でさらなるDCR抑制を計画している.
結論:
- 提案されているBSI Ge-on-Si SPADのライトトラップは,SWIR光子の検出を大幅に改善します.
- この進歩により,より大きなSPAD配列とSWIRセンシングのより高い統合が可能になります.
- 最適化されたデバイス構造は,次世代のSWIR画像技術にとって極めて重要です.
関連する概念動画
Photoelectric Effect
When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
The Ideal Diode
A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
Diode: Forward bias
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
The behavior of a diode in forward bias...
Diode: Reverse bias
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Modeling of Diode Forward Characteristics
Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
Modeling of Diode Reverse Characteristics
In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...

