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関連する概念動画

Upsampling01:22

Upsampling

656
Managing signal sampling rates is essential in digital signal processing to maintain signal integrity. A decimated signal, characterized by a reduced frequency range due to its lower sampling rate, can be upsampled by inserting zeros between each sample. This upsampling process expands the original spectrum and introduces repeated spectral replicas at intervals dictated by the new Nyquist frequency. To refine this zero-inserted sequence, it is passed through a lowpass filter with a cutoff...
656
Aliasing01:18

Aliasing

709
Accurate signal sampling and reconstruction are crucial in various signal-processing applications. A time-domain signal's spectrum can be revealed using its Fourier transform. When this signal is sampled at a specific frequency, it results in multiple scaled replicas of the original spectrum in the frequency domain. The spacing of these replicas is determined by the sampling frequency.
If the sampling frequency is below the Nyquist rate, these replicas overlap, preventing the original...
709
Cascaded Op Amps01:16

Cascaded Op Amps

1.2K
Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
1.2K
MOS Capacitor01:25

MOS Capacitor

1.6K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.6K
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

1.2K
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.2K
MOSFET Amplifiers01:17

MOSFET Amplifiers

584
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
584

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関連する実験動画

Updated: Feb 22, 2026

High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip
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Si CMOSの非理想性を,ストキャスティックおよびアナログ画像処理に再利用する.

Been Kwak1, Ryun-Han Koo2, Changhyeon Han1

  • 1Department of Electrical Engineering, Hanyang University, Seoul 04763, Republic of Korea.

Science advances
|February 20, 2026
PubMed
まとめ
この要約は機械生成です。

研究者は,生成再結合ノイズや負微分抵抗のような半導体デバイスの非理想性を,高度なストキャスティックアナログコンピューティングのための機能的リソースに再利用しました. このシングルデバイスアプローチは,既存のCMOS技術を使用して多機能コンピューティングを可能にします.

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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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関連する実験動画

Last Updated: Feb 22, 2026

High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip
14:09

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Published on: November 16, 2019

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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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科学分野:

  • 半導体デバイスの物理 半導体デバイスの物理
  • アナログコンピューティングアーキテクチャのアナログコンピューティングアーキテクチャ
  • マテリアルサイエンス 材料科学

背景:

  • 固有のデバイスの非理想性は,通常,従来の半導体工学で最小限に抑えられます.
  • 1/fノイズと比較して,生成再結合 (G-R) ノイズと衝撃イオン化誘発負微分抵抗 (NDR) に限られた注意が払われてきました.

研究 の 目的:

  • 先進的なストキャスティックアナログコンピューティングのためのデバイスの非理想性の戦略的再利用を実証する.
  • G-RノイズとNDRを活用して,単一のデバイスレベルでの多機能アナログコンピューティングを行う.

主な方法:

  • 深層チャネルトラップによるG-Rノイズとインパクトイオン化によるNDRを身体の電流で利用した.
  • 産業用シリコンコンプリメンタリー金属酸化物半導体 (CMOS) 工法で製造された完全に枯渇したシリコン・オン・インソレーター・トランジスタを使用した.
  • 適用されたバイアスの条件を再構成することによって,多機能コンピューティングを達成しました.

主要な成果:

  • 制御可能な時間相関を持つ実証されたG-Rノイズ.
  • 前例のないピークとバレーの比率 (2.78 × 10 ^ 4) でNDRを達成しました.
  • シングルトランジスタはストキャスティック暗号化,ディテリミニスト信号読み出し,アナログ反転を行いました.

結論:

  • 成熟したCMOS技術の未知のコンピューティングの可能性を明らかにした.
  • エキゾチックな素材に基づいた建築に対するスケーラブルでエネルギー効率の良い代替案を提示した.
  • 次世代のアナログコンピューティングシステムの基礎を築きました.