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Updated: Feb 22, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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ダイエレクトリックSb4O5Cl2の単結晶における指向性イオン移動は,多機能の二次元電子機器のための単結晶である.

Zexin Li1, Genchang Gou1, Xiang Xu1

  • 1State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, P. R. China.

Nature communications
|February 20, 2026
PubMed
まとめ

私たちは,Sb4O5Cl2という新しい単結晶イオン介電器を開発し,2D MoS2トランジスタでプログラム可能な電子状態の移行を可能にしました. この材料は,高度なエレクトロニクスとニューロモルフィックコンピューティングアプリケーションのための高性能を提供します.

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