酸化物半導体におけるしきい値電圧不安定性の起源
Tzu-Jie Lin1,2, Sheng-Chung Chen1, Yung-Ting Lee3
1Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
ACS applied materials & interfaces
|February 23, 2026
まとめ
超薄膜酸化インジウム(In₂O₃)トランジスタにおけるしきい値電圧不安定性は、表面吸着酸素の相互作用によって引き起こされる。本研究は、信頼性の高い酸化物半導体デバイスに不可欠な回復ダイナミクスの統一モデルを明らかにする。
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