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Updated: Feb 24, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

HfZrO2ベースのトンネル接合におけるチューナブルスイッチングメカニズム：高性能シナプスアレイ向け

Jiwon You¹, Jeong-Han Kim², Minsuk Song³

¹Department of AI Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|February 23, 2026

Abstract:

Strategic optimization of ferroelectric tunnel junctions (FTJs) is critical for advancing nonvolatile memory and neuromorphic computing technologies. In this work, we present a comprehensive study on materials and structural engineering to enable scalable hybrid-switching FTJ arrays. We systematically manipulated oxygen vacancy (V_O) concentrations in HfZrO₂ (HZO) films through strategic choices of bottom electrodes and interfacial layers, achieving three distinct operational modes: pure ferroelectric switching, defect-modulated switching, and combined hybrid switching. Our optimized devices demonstrate exceptional tunneling electroresistance (TER) performance: Mo bottom electrodes achieve a TER ratio of around 10², while Mo/Ti bottom electrodes attain TER to over 10⁴. Lower-leakage ferroelectric switching and enhanced polarization stability are observed with Mo bottom and ZrO₂ interlayers, while V_O-driven resistive contributions from Ti electrodes amplify TER in hybrid devices. Utilizing these optimized parameters, we fabricated a 42 × 42 FTJ array demonstrating uniform multi-level conductance modulation. The fabricated FTJ array was integrated into an in-memory Vision Transformer (ViT) architecture, successfully performing stable and energy-efficient parallel vector-matrix multiplication (VMM) operations despite device variability. This work shows that precisely engineered, large-area hybrid-switching FTJ arrays can provide a scalable and energy-efficient hardware platform for next-generation memory and neuromorphic systems.

キーワード:

HfZrO2 強誘電体トンネル接合ハイブリッドスイッチング大規模クロスバーアレイ酸素空孔 Vision Transformer

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Published on: August 2, 2019

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