関連する実験動画

Updated: Feb 25, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

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効率的で安定した広帯域ギャップペロブスカイトおよびタンデム太陽電池を駆動する界面エンジニアリング複合自己組織化単分子膜

Qingquan He1, Xinquan Wang1, Gang Xu1

  • 1Science and Education Integration, College of Energy and Carbon Neutralization, College of Materials Science and Engineering, Zhejiang Provincial Key Laboratory of Clean Energy Conversion and Utilization, State Key Laboratory of Green Chemical Synthesis and Conversion, Zhejiang University of Technology, Hangzhou 310014, P. R. China.

ACS applied materials & interfaces
|February 24, 2026
PubMed
まとめ

No abstract available in PubMed .

キーワード:
広帯域ギャップペロブスカイト複合自己組織化単分子膜界面制御安定性タンデム太陽電池

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Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

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Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

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関連する概念動画

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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