ドープMoS₂の分子動力学シミュレーションを可能にする機械学習原子間ポテンシャル

Dopants can tune the performance of MoS₂ in various applications, but the use of molecular dynamics simulations for doped MoS₂ materials discovery is limited by the lack of multidopant interatomic potentials. Universal machine learning interatomic potentials (MLIPs) could be a solution, but the accuracy of these potentials must first be evaluated. Here, we evaluate the accuracy of a recently developed MLIP, META's Universal Model for Atoms, for 25 different MoS₂ dopants spanning metals, nonmetals, and transition metals in Mo-substitution, S-substitution, and intercalated positions by benchmarking the MLIP-predicted formation energy and the dopant-induced structural change against density functional theory (DFT) calculations. The computational framework for MLIP validation and simulations is described in detail, and the source code is made available online. The MLIP is then demonstrated by performing heating-cooling simulations of MoS₂ supercells with all 25 dopants. These simulations capture complex phenomena including dopant clustering, MoS₂ layer fracturing, interlayer diffusion, and chemical compound formation at orders-of-magnitude reduced computational cost compared to DFT. This work provides a computational workflow for the application-oriented design of doped-MoS₂, enabling high-throughput screening of dopant candidates and optimization of compositions for targeted tribological, electronic, and optoelectronic performance.