緑色発光Gd₃GaO₆:Tb³⁺蛍光体の合成、構造精密化および発光特性:ディスプレイ応用
Reshu Kajal1, Devender Singh1, Rinki Jangra1
1Department of Chemistry, Maharshi Dayanand University Rohtak-124001 India devjakhar@gmail.com.
Abstract:
Green-emitting Tb3+-doped Gd3GaO6 phosphors were fabricated through a low-temperature solution-combustion approach utilizing urea as the fuel. Powder XRD analysis suggested an orthorhombic structure with the Cmc21 space group. Crystallite size was determined using the Scherrer's formula and W-H plot. Surface topography was examined utilizing the FESEM technique, and EDX data confirmed the uniform incorporation of Tb3+ ions into the Gd3GaO6 lattice with proper stoichiometry. A bright green emission was exhibited by phosphors at 543 nm, attributed to the 5D4 → 7F5 transition upon irradiation with near ultraviolet light at 272 nm. The observed concentration quenching at 3 mol% Tb3+ in the Gd3GaO6 matrix was attributed to non-radiative energy transfer between the neighbouring Tb3+ ions, which became significant at higher doping levels. The quenching observed beyond the optimum concentration is primarily attributed to dipole-dipole interactions between adjacent Tb3+ ions. The CIE chromaticity coordinates are located the green region, and the calculated CCT value (4500-5500 K) lies in the cool temperature range, making this phosphor a suitable candidate for cool white-solid state lighting and display devices.
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