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Updated: Feb 27, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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MBEによるInP上のMnTeのアルテル磁性および非中心対称多形間のプログラム可能な相選択

An-Hsi Chen1, Parul R Raghuvanshi1, Jacob Cook1,2

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.

ACS applied materials & interfaces
|February 25, 2026
PubMed
まとめ

No abstract available in PubMed .

キーワード:
アルテル磁性反磁性磁性分子線エピタキシー(MBE)非中心対称プログラム可能な合成スピン運動量ロックスピントロニクス

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Last Updated: Feb 27, 2026

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Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
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