PT-対称反強磁性体を異常輸送の構成要素として
Ling Bai1, Siyuan Liu1, Xiangju Wang1
1Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China.
スピントロニクス応用において異常ホール効果(AHE)を誘発するための、PT対称反強磁性体を用いた新しい設計戦略を提案する。これらの材料を積層化することで、AHE特性を調整可能な新しい磁気二層構造が作成される。
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