正および負の応答を示すバイアス電圧駆動単分子スイッチ
Yunpeng Li1, Yanfeng Shen1, Rui Wang1
1Key Laboratory for Advanced Materials, Feringa Nobel Prize Scientist Joint Research Center, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China.
Abstract:
Developing all-electrically driven molecular switches with different responses is crucial for molecular circuits to achieve complex logical operations and self-protection. Herein, benzothiadiazole (BTZ)-centered molecular wires were synthesized, and their charge transport properties were investigated. Conductance measurements revealed that all wires exhibited bias voltage-driven switching behaviors under low bias voltage. Specifically, the wires with thiomethyl as an anchor displayed positive response switching, while those with pyridine as an anchor showed negative response switching. The maximum on/off conductance ratios reached up to 28.8 and 30.2 for positive and negative response switches, respectively, which are among the highest values for all-electrically driven molecular switches. Control experiments and theoretical calculations indicated that the switching characteristics originated from the dependence of the frontier energy levels of the wires and the Au-π interactions of the junctions on the bias voltage. These findings will aid in the design of high-performance bias voltage-driven molecular devices and advance the development of molecular electronics.
さらに関連する動画
09:54Multifunctional, Micropipette-based Method for Incorporation And Stimulation of Bacterial Mechanosensitive Ion Channels in Droplet Interface Bilayers
Published on: November 19, 2015
09:57Imaging Membrane Potential with Two Types of Genetically Encoded Fluorescent Voltage Sensors
Published on: February 4, 2016
関連する概念動画
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Bipolar Junction Transistor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
