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一个基于半导体的光子记忆细胞

Zimmermann¹, Wixforth, Kotthaus

¹Sektion Physik and Center for Nanoscience, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, D-80539 München, Germany. Walter-Schottky-Institut, Technische Universität München, Am Coulombwall, D-85748 Garching, Germany.

Science (New York, N.Y.)

|February 26, 1999

概括

研究人员开发了一种存储光子信号的半导体记忆细胞. 这一突破将光子存储时间延长了其自然寿命的1万倍以上,从而实现了新的光学计算可能性.

科学领域:

固态物理固态物理
量子电子学量子电子学
光子学是一个光子学.

背景情况:

对光子信号的有效存储对于光学计算和量子信息处理至关重要.
现有的方法通常存储时间短,限制了它们的实际应用.

研究的目的:

为了证明光子信号在基于半导体的新型记忆细胞中的高效和长期存储.
通过可调节的静电超网来研究光子存储和检索的机制.

主要方法:

采用半导体记忆电池,具有量子井,用于存储从事件光子生成的电子孔对.
采用一个场效应可调节的静电超网格来调节量子井潜力.
研究了在大型超格子潜在幅度上的储存时间,并通过平整超格子振幅触发释放.

主要成果:

实现了光子信号的高效存储.
将电子孔对的存储时间延长了至少五个数量级,超出了它们的自然寿命.
在短暂,强烈的不连贯光的闪光中,证明了存储的光子的受控释放.

结论:

开发的半导体存储电池为长期光子信号存储提供了一个有前途的平台.
场效应可调节的静电超网是实现延长存储时间和控制释放的关键.
这项技术对推进光学数据存储和处理具有重大意义.

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