磁化衰变的起源在自旋依赖道连接处
McCartney1, Dunin-Borkowski, Scheinfein
1Center for Solid State Science, Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1704, USA. IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120-6099, USA.
概括
旋转依赖道连接处的磁硬层由于软层的边缘场而衰变. 这种不稳定性威胁到未来的信息存储设备应用.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 旋转依赖的道连接是信息存储的关键.
- 硬磁层的不稳定性导致磁化衰变,阻碍了设备应用.
研究的目的:
- 调查旋转依赖道连接处硬层衰变的原因.
- 了解磁化不稳定背后的机制.
主要方法:
- 洛伦茨电子显微镜的电子显微镜
- 微磁模拟的微磁模拟
主要成果:
- 硬层衰变源于软层磁域墙壁的边缘场.
- 域壁运动诱导硬层颗粒中的磁时刻的统计翻转.
- 观察到硬层的渐进性乱和去磁化.
结论:
- 来自软层域壁的边缘场对硬层的不稳定性负责.
- 这种机制限制了自旋取决于数据存储的道连接的可靠性.
- 需要进一步的研究,以减轻这种衰变的实际应用.
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