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和之间存在很大的差异,抗氧化物在抗氧化物中的自我扩散
H Bracht1, S P Nicols, W Walukiewicz
1University of California and Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA. bracht@uni-muenster.de
Nature
|November 18, 2000
概括
用同位素控制的层研究了在晶抗氧化物 (GaSb) 中的自我扩散. (Ga) 原子在点附近的扩散速度是 (Sb) 原子的1000倍以上.
科学领域:
- 固态物理 固态物理
- 材料科学是一种材料科学.
- 半导体物理 半导体物理
背景情况:
- 自扩散是固体中基本的质量运输过程,对于理解杂质扩散和半导体设备开发至关重要.
- 以前对GaAs和GaP等半导体的自我扩散研究仅限于具有多个稳定同位素 (例如Ga) 的元素.
- 同位素控制的半导体异构结构使各种材料的精确自我扩散研究成为可能.
研究的目的:
- 用同位素控制的多层结构研究在晶体抗氧化物 (GaSb) 中的自我扩散.
- 同时研究 (Ga) 和反 (Sb) 在各自的子网上扩散的情况.
- 阐明负责GaSb.中的原子移动性差异的潜在物理机制.
主要方法:
- 制造一种以同位素控制的多层结构的晶体GaSb.
- 使用Ga (69Ga,71Ga) 和Sb (121Sb,123Sb) 的两个稳定的同位素进行同时扩散研究.
- 在点附近进行高温扩散实验,然后对同位素配置进行分析.
主要成果:
- 在接近化温度的GaSb中,在Ga和Sb之间观察到自我扩散系数的显著差异.
- (Ga) 原子的扩散速度比反 (Sb) 原子快三倍.
- 观察到的扩散行为偏离了标准扩散模型,这表明了复杂的缺陷相互作用.
结论:
- 在GaSb中Sb的异常缓慢的扩散归因于Ga和Sb子网上的点缺陷之间的反应.
- 这些缺陷反应抑制了Sb自我扩散所需的特定缺陷.
- 这些发现需要先进的扩散模型来准确地描述GaSb.等化合物半导体中的原子运输.
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