通过单壁碳纳米管中的缺陷引起的共振电子散射
M Bockrath1, W Liang, D Bozovic
1Department of Physics, Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA.
概括
金属碳纳米管的缺陷导致了显著的阻力变化. 这些缺陷使共振电子散射成为可能,并且可以形成量子点,影响纳米管电子.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 金属单壁碳纳米管 (SWCNTs) 对电子应用具有前景.
- 了解缺陷对于控制SWCNT属性至关重要.
研究的目的:
- 为了描述单个金属SWCNT的缺陷.
- 调查缺陷对电力传输性能的影响.
- 探索缺陷的潜力,创造新的电子设备.
主要方法:
- 在室内和低温下进行运输测量.
- 扫描门显微镜检测局部电子潜力.
- 对门电压依赖电阻和共振散射现象的分析.
主要成果:
- 很大一部分金属SWCNT在室温下表现出取决于门的电阻.
- 由缺陷引起的共振电子散射被确定为原因.
- 在散射共振峰值测量了大约0.5的反射系数.
- 通过使用两个缺陷,成功制造了管内量子点装置.
结论:
- 金属SWCNT的缺陷对它们的电传输有很大影响.
- 缺陷引起的共振散射是影响电阻的关键机制.
- 这些缺陷可以用来在SWCNT中设计功能量子点设备.
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