在超导MgB2薄膜中,具有高临界电流密度和增强的不可逆性场
1Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, USA. eom@engr.wisc.edu
Nature
|June 1, 2001
概括
氧合金二 (MgB2) 薄膜显示了增强的高场超导性. 这一突破为先进的磁铁和电子产品提供了潜力,克服了关键磁场的先前局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 二化物 (MgB2) 在39K时表现出超导性,提供了一类新的超导材料.
- B2的过渡温度高于传统的超导体,如Nb3Sn和Nb-Ti.
- B2的一个局限性是其适度的不可逆性场 (H*),限制了实际应用.
研究的目的:
- 为了研究氧合金对MgB2薄膜的超导性能的影响.
- 为了提高MgB2的不可逆性场 (H*) 和临界电流密度,用于高场应用.
主要方法:
- 用氧合金制成的MgB2薄膜的制造.
- 测量不可逆现场的温度依赖性 (H*(T)).
- 在各种磁场和液温度 (4.2 K) 中评估临界电流密度.
主要成果:
- 与氧合金MgB2薄膜相比,与散装MgB2相比,MgB2薄膜表现出更的H*(T) 温度依赖性.
- 在4.2K时实现了超过14T的不可逆转场 (H*).
- 证明了高临界电流密度:1MA cm-2在1T和105A cm-2在10T.
结论:
- 氧合金显著提高MgB2.2的高场超导性能.
- 修改的MgB2薄膜显示出用于高场超导磁体和电子应用的巨大潜力.
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