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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 2, 2013
通过溶液-液体-固体机制培养的AlxGa1-xAs纳米胡须中的相分离
P D Markowitz1, M P Zach, P C Gibbons
1Department of Chemistry, Washington University, St. Louis, Missouri 63130-4899, USA.
Journal of the American Chemical Society
|July 18, 2001
概括
通过溶液-液体-固体机制低温增长的甲 (AlxGa1-xAs) 仅产生特定的组成. 纳米结构表现出动力驱动的,转移稳定的相位分离到富含Al和富含Ga的领域.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 半导体物理 半导体物理
背景情况:
- 溶液-液体-固体 (SLS) 机制是一种合成半导体纳米线的方法.
- 甲 (AlxGa1-xAs) 是一种可调节的合金半导体,在光电子领域有应用.
- 在低温生长过程中控制AlxGa1-xAs的组成是具有挑战性的.
研究的目的:
- 研究AlxGa1-xAs纳米胡须在低温下通过SLS机制生长的组成和纳米结构.
- 了解相隔行为及其对材料性质的影响.
主要方法:
- 使用SLS机制的AlxGa1-xAs纳米胡须的低温生长.
- 使用传输电子显微镜 (TEM) 和电子能量损失光谱 (EELS) 的组合分析.
- 光发光 (PL) 谱学用于研究光学特性.
- 化研究以评估结构稳定性.
主要成果:
- 只有使用特定成分 (x = 0.1 和 0.8) 才能获得AlxGa1-xAs纳米胡须.
- 中间组合是无法获得的.
- 纳米结构表现出自发的,动力驱动的相分离到富含Al和富含Ga的域 (3-20 nm).
- 这些相隔的纳米结构是变态稳定的.
结论:
- 在低温下的SLS方法导致动力有限的生长,导致转移稳定,组合调节的AlxGa1-xAs纳米胡须.
- 自发相位分离显著影响AlxGa1-xAs.As的光辐射行为.
- 需要进一步了解AlxGa1-xAs中的相分离的理论.
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