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Updated: Jul 24, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
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对纳米电子的限制用于 terascale 集成.

J D Meindl1, Q Chen, J A Davis

  • 1School of Electrical and Computer Engineering, Microelectronics Research Center, Georgia Institute of Technology, Atlanta, GA 30332-0269, USA. james.meindl@mirc.gatech.edu

Science (New York, N.Y.)
|September 15, 2001
PubMed
概括

半导体技术为 terascale 集成 (TSI) 提供了巨大的潜力,使每个芯片能够实现超过一万亿个晶体管. 实现这一目标需要先进的双门晶体管,并克服未来纳米电子的互连挑战.

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Semiconductors01:22

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...