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相关概念视频

Lattice Centering and Coordination Number02:33

Lattice Centering and Coordination Number

The structure of a crystalline solid, whether a metal or not, is best described by considering its simplest repeating unit, which is referred to as its unit cell. The unit cell consists of lattice points that represent the locations of atoms or ions. The entire structure then consists of this unit cell repeating in three dimensions. The three different types of unit cells present in the cubic lattice are illustrated in Figure 1.
Types of Unit Cells
Imagine taking a large number of identical...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Unit Cells01:18

Unit Cells

A crystal's internal structure is an orderly array of atoms, ions, or molecules, and the details of this array significantly influence the solid's properties. In a crystal, periodically repeating 'structural motifs' - which could be atoms, molecules, or groups thereof - create a 'space lattice.' This is essentially a three-dimensional, infinite array of points, each surrounded by its neighbors in an identical way, forming the basic structure of the crystal.A 'unit cell' is a theoretical...
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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在二维合晶体中点缺陷的扩散.

A Pertsinidis1, X S Ling

  • 1Department of Physics, Brown University, Providence, Rhode Island 02912, USA. pertsin@barus.physics.brown.edu

Nature
|September 15, 2001
PubMed
概括

合晶体中的点缺陷,如空隙,可以转化为位移对,促进二空隙扩散. 缺陷跳跃显示记忆效应,而不是随机步行,提供了对2D系统动态的洞察.

科学领域:

  • 凝聚物质物理学 凝聚物质物理学
  • 材料科学是一种材料科学.
  • 物理化学 物理化学

背景情况:

  • 合晶体自组装成有序的结构,作为科学研究的模型系统.
  • 在二维合晶体中,可以使用光学笔创建和研究点缺陷,例如空白.
  • 这些缺陷比晶格表现出较低的对称性,并且可以分离成位移,这是2D系统中关键的拓激发.

研究的目的:

  • 为了研究二维合晶体中单空和二空的动态.
  • 探索点缺陷激发到脱位对如何影响缺陷扩散.
  • 分析缺陷的跳跃行为,以寻找记忆效应.

主要方法:

  • 使用合晶体模型系统与光学子用于粒子操纵.
  • 在二维合晶体中创建和成像点缺陷 (单空和二空).
  • 观察并分析了这些缺陷的动态和跳跃行为.

主要成果:

  • 证据表明,激发点缺陷成脱位对的刺激点缺陷增强了二空位扩散.
  • 发现缺陷跳动动态表现出记忆效应,偏离纯粹的随机步行.
  • 观察到稳定缺陷配置的对称度低于底层的三角格子.

更多相关视频

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

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Last Updated: Jun 24, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

结论:

  • 该研究提供了对二维合晶体点缺陷的动态的见解.
  • 在缺陷跳跃中观察到的记忆效应可能与理解其他二维系统有关.
  • 点缺陷转化为位移对影响缺陷的移动性.