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在半导体微腔中高温超快极子参数放大

M Saba1, C Ciuti, J Bloch

  • 1Physics Department, Swiss Federal Institute of Technology Lausanne, PH-Ecublens, CH-1015 Lausanne-EPFL, Switzerland. Michele.Saba@epfl.ch

Nature
|December 14, 2001
PubMed
概括

这项研究证明了半导体微腔中高温极子参数放大,实现了显著的光放大. 这一发现为在高温下运行的先进全光学设备开辟了可能性.

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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