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纳米线超晶格结构的增长用于纳米级光子学和电子学

Mark S Gudiksen¹, Lincoln J Lauhon, Jianfang Wang

¹Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.

|February 8, 2002

概括

研究人员合成了新的半导体纳米线超级网,使先进的纳米电子和光子设备成为可能. 这些结构为纳米级发光二极管和传感器等应用提供了增强的功能.

科学领域:

纳米技术纳米技术
材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学

背景情况:

半导体纳米线和碳纳米管是纳米电子和光子学的关键.
目前使用纳米线的设备在复杂性和功能方面存在局限性.
平面半导体技术利用超级网来实现多功能电子和光子功能.

研究的目的:

为了证明半导体纳米线超级网的合成.
探索创建复杂纳米结构的新方法.
为了研究这些超级格子在先进设备中的潜力.

主要方法:

在纳米线生长过程中,蒸汽相表达与调节的反应剂供应.
合成组合调制的超级格子 (例如,GaAs/GaP).
制造调制合的纳米线 (例如,n-Si/p-Si,n-InP/p-InP).

主要成果:

从III-V组和IV组材料中成功合成了半导体纳米线超级网.
准备好的超级网格,有2到21层的GaAs和GaP.
通过光发光,电传输和电光发光测量证明了独特的光子和电子特性.

结论:

半导体纳米线超级网格为先进的应用提供了独特的特性.
这些结构可以为纳米电子和光子学中的各种功能量身定制.
潜在的应用包括纳米条形码和极化纳米级LED.

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