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Updated: Jun 20, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

在高度n型散体Si中的单个剂原子和集群的原子尺度成像

P M Voyles1, D A Muller, J L Grazul

  • 1Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA.

Nature
|April 27, 2002
PubMed
概括

研究人员使用先进显微镜在中可视化了单独的反配剂原子和集群. 这一突破解释了为什么添加更多的剂会阻止先进的半导体设备中增加电荷载体.

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry07:10

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry

Published on: April 29, 2020

相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...