超快速的 precessional 磁化逆转在皮秒的磁场脉冲塑造
Th Gerrits1, H A M Van Den Berg, J Hohlfeld
1Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands.
Nature
|August 2, 2002
概括
研究人员开发了一种用于更快地切换磁性内存的新方法. 该技术使用有形磁脉冲来防止磁随机存取内存 (MRAM) 设备中的数据错误.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 物理 物理学 物理
背景情况:
- 磁性存储器设备,包括磁性随机访问存储器 (MRAM),自1954年以来一直在不断开发,以提高速度,密度和可靠性.
- 通过连贯旋转进行快速磁化反转对于MRAM性能至关重要,因为域壁运动太慢.
- 在MRAM中的低临界度磁系统可能会出现声,导致反向切换和数据完整性问题.
研究的目的:
- 介绍一种用于在低临界水系统中逆转磁化的新方法.
- 通过连贯旋转实现可靠的磁化反转,同时避免有害的环绕.
- 为了使MRAM设备的切换时间更快,而不会影响数据完整性.
主要方法:
- 应用特定形状的磁场脉冲,以适应磁元素的内在特性.
- 采用微米大小的圆形永久合金元素,经过 lithographic 结构.
- 探测所有三个磁化元件以验证反转动力学.
主要成果:
- 在低临界水系统中证明可靠的前置磁化逆转.
- 实现的切换时间约为200皮秒 (ps).
- 获得的反转速度是自然阻尼时间常数的十倍.
结论:
- 开发的方法通过连贯旋转有效地逆转磁化,避免在低临界水系统中发生声.
- 在MRAM元件中,使用精确形状的磁场脉冲可以实现快速可靠的切换.
- 这一进步显著提高了未来磁性存储器技术的潜在速度和数据完整性.
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