在单晶等离子体沉积钻石中,载体流动性很高
Jan Isberg1, Johan Hammersberg, Erik Johansson
1ABB Group Services Center, Corporate Research, Nanotechnology and Innovative Materials Group, Västerås, Sweden. jan.isberg@angstrom.uu.se
概括
高纯度单晶钻石在室温下表现出极好的电子和孔移动性. 这些发现推动了高性能钻石电子产品的发展.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体技术 半导体技术
背景情况:
- 单晶钻石具有独特的电子特性.
- 化学蒸汽沉积 (CVD) 的进步使得高纯度钻石的生长成为可能.
- 钻石是高性能电子设备的一个有前途的材料.
研究的目的:
- 测量电子和高纯度单晶钻石中孔的室温漂移运动.
- 评估用于电子应用的CVD种植钻石的质量.
- 为了支持下一代钻石电子产品的发展.
主要方法:
- 在厚厚的,内在的,独立的钻石板上利用了飞行时间技术.
- 测量了电子和孔的低场漂移动性.
- 使用p-i连接二极管上的电流-电压测量验证的移动性值.
主要成果:
- 实现了4500cm2/Vs的电子漂移移动性.
- 实现了3800cm2/Vs的孔漂移移动性.
- 在合成的钻石中证明了可复制的电子特性.
结论:
- 通过CVD培养的高纯度单晶钻石表现出卓越的室温电荷载体流动性.
- 测量的移动性与其他先进的半导体材料具有竞争力.
- 这些结果表明,在实现实用的高性能钻石电子方面取得了重大进展.
相关概念视频
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