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相关概念视频

Network Covalent Solids02:18

Network Covalent Solids

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Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
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Crystal Field Theory - Octahedral Complexes02:58

Crystal Field Theory - Octahedral Complexes

31.8K
Crystal Field Theory
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
31.8K
Non-ohmic Devices00:51

Non-ohmic Devices

1.7K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.7K
P-N junction01:11

P-N junction

1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Heterogeneous Catalysis01:22

Heterogeneous Catalysis

111
Heterogeneous catalysis involves a catalyst in a different phase from the reactants. It is a process where the catalyst and the reactants are in distinct phases, typically solid and gas or liquid.Most heterogeneous catalysts are metals, metal oxides, or acids. The list includes transition metals like iron (Fe), cobalt (Co), nickel (Ni), palladium (Pd), platinum (Pt), chromium (Cr), manganese (Mn), tungsten (W), silver (Ag), and copper (Cu). These metals possess partially vacant d orbitals that...
111

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相关实验视频

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Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
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长轴核心和核心多纳米线异构结构.

Lincoln J Lauhon1, Mark S Gudiksen, Deli Wang

  • 1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.

Nature
|November 8, 2002
PubMed
概括

研究人员使用化学蒸气沉积开发了新的和核心外纳米线. 这一突破使先进的电子和光子设备的辐射组成和兴奋剂控制成为可能.

科学领域:

  • 材料科学 材料科学 材料科学
  • 纳米技术 纳米技术
  • 固态物理 固态物理

背景情况:

  • 半导体异构结构对于先进的电子和光子设备至关重要.
  • 控制纳米级构建块中的接口对于设备的功能至关重要.
  • 纳米线中的辐射组成和兴奋剂调制仍未像平面系统那样得到探索.

研究的目的:

  • 为了合成和核心和多纳米线异构结构.
  • 在纳米线增长中调查辐射组成和兴奋剂控制.
  • 展示这些结构在新型设备应用中的潜力.

主要方法:

  • 化学蒸汽沉积 (CVD) 用于合成纳米线异构结构.
  • 在内在和-氧化核心外纳米线上添加的外的生长.
  • -和-核心外结构的异质生长.

主要成果:

  • 在相对较低的温度下,在上实现了外的同质.
  • 证明了晶体Ge-Si和Si-Ge核心外结构的异质上增长.
  • 成功合成了核心多结构,包括一个高性能场效晶体管.

结论:

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  • 纳米线中的辐射异构生长是创建先进材料的可行方法.
  • 核心外结构中的带抵消可以控制载体注入.
  • 开发的方法为未来基于纳米线的电子和光子设备提供了巨大的潜力.