在上晶体介电器的接口阶段和肖特基屏障
R A McKee1, F J Walker, M Buongiorno Nardelli
1Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
概括
介电半导体接口上的电子交换障碍被可调节的"库伦缓冲器"接口阶段重新定义. 这一发现挑战了传统的肖特基理论,并使障碍高度概念发挥作用.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 半导体物理 半导体物理
背景情况:
- 介电半导体接口上屏障高度的传统解释依赖于肖特基的理论.
- 对Schottky理论的修改考虑了半导体散装终结的间隙状态.
研究的目的:
- 为了研究异质质在确定介电半导体接口的静电边界条件中的作用.
- 介绍和描述一个新的接口阶段,作为"库伦缓冲区".
- 为了证明这个库伦缓冲区的可调性及其对障碍高度概念的影响.
主要方法:
- 分析异质形结构,以了解接口的特点.
- 在接口上的静电边界条件的理论建模.
- 界面阶段的调节性质的表征.
主要成果:
- 静电边界条件由一个不同的接口阶段建立,称为"库伦缓冲区".
- 这种库伦缓冲器是可调的,可以控制接口属性.
- 库伦缓冲区的存在重新定义了屏障高度的基本概念.
结论:
- 库伦缓冲机制为了解介电半导体接口的电子交换提供了一个新的框架.
- 异质代使得这种可调节接口阶段的工程成为可能.
- 这项工作在半导体接口物理学中提供了传统的Schottky理论的范式转变.
相关概念视频
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