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Updated: Jul 19, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Published on: June 3, 2015

在PbSe量子点膜中注入电子和孔

Brian L Wehrenberg1, Philippe Guyot-Sionnest

  • 1James Franck Institute, The University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637, USA.

Journal of the American Chemical Society
|June 26, 2003
PubMed
概括

研究人员使用电化学方法将电子和孔注入到化 (PbSe) 半导体纳米晶体中. 通过观察红外吸收光谱的变化来证实这种电荷注入,证明了对量子受限状态的控制.

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...