相关实验视频

Updated: Jul 20, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

单壁碳纳米管功能化的电子结构控制

Michael S Strano1, Christopher A Dyke, Monica L Usrey

  • 1Department of Chemical and Biomolecular Engineering, University of Illinois-Urbana/Champaign, Urbana, IL 61801, USA. strano@uiuc.edu

Science (New York, N.Y.)
|September 13, 2003
PubMed
概括

迪亚佐尼试剂根据电子结构选择性地功能化单壁碳纳米管. 这种精确的化学反应可以逆转,恢复纳米管.

更多相关视频

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...