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在YbGaGe中由于电子价值过渡而导致零热膨胀

James R Salvador1, Fu Guo, Tim Hogan

  • 1Department of Chemistry and Centre for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824, USA.

Nature
|October 17, 2003
PubMed
概括

研究人员发现了一种新材料,Ytterbium Gallium Germanide (YbGaGe),具有接近零的热膨胀 (ZTE). 这种导电化合物在广泛的温度范围内显示的体积变化微不足道,这可能会消除对复杂复合材料的需求.

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