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在半导体纳米线上的绝缘管状BN外.

Ying-Chun Zhu1, Yoshio Bando, Dong-Feng Xue

  • 1Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-044, Japan. yingchunzhu@yahoo.com

Journal of the American Chemical Society
|November 20, 2003
PubMed
概括

研究人员开发了一种方法来创建隔热性化 (BN) 覆盖的纳米结构. 这项技术成功地将半导体纳米线涂上晶体BN,为先进应用产生统一的纳米结构.

科学领域:

  • 材料科学 材料科学 材料科学
  • 纳米技术纳米技术
  • 固态化学 固态化学

背景情况:

  • 半导体纳米线对于纳米电子设备至关重要.
  • 开发用于纳米线的绝缘涂层对于设备的性能和稳定性至关重要.
  • 化 (BN) 具有出色的绝缘性能和热稳定性.

研究的目的:

  • 开发一种有效的方法来产生带化 (BN) 覆盖的管状纳米结构.
  • 为了研究半导体纳米线与BN纳米电缆的成功覆盖.
  • 描述由此产生的纳米结构的形态和结晶性.

主要方法:

  • 利用一种新的方法在现有纳米线芯周围形成化层.
  • 采用了在 ZnS 和 Si-SiO2 纳米线模板上沉积和结晶化的技术.
  • 使用先进的显微镜和衍射技术对纳米结构进行了表征.

主要成果:

  • 成功生成了化 (BN) 覆盖的隔热管状纳米结构.
  • 证明了ZnS纳米线和多层Si-SiO2纳米线与BN形成纳米线的有效覆盖.
  • 证实了半导体纳米线芯和BN都是晶体,形态非常均.

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结论:

  • 开发的方法为生产高质量的BN覆盖纳米结构提供了有效的途径.
  • 由此产生的晶体和均的BN涂层增强了半导体纳米线的性能.
  • 这些BN覆盖的纳米结构具有先进电子和光电子应用的潜力.