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Updated: Jul 19, 2026

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由价值电子度驱动的相变:调整Gd5GaxGe4-x中的板间键距离

Yurij Mozharivskyj1, Wonyoung Choe, Alexandra O Pecharsky

  • 1Ames Laboratory, Iowa State University, Ames, Iowa 500110, USA.

Journal of the American Chemical Society
|December 5, 2003
PubMed
概括

Gd(5) Ga(x) Ge(4-x) 化合物的晶体结构取决于电子度. 较高的电子数量破坏了T-T二极体,改变了这个加多合金系统中的晶体结构.

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