1至2纳米直径的电子结构芯/外纳米晶体:表面化学,光学光谱,电荷转移和兴奋剂
Zhiyong Zhou1, Richard A Friesner, Louis Brus
1Chemistry Department, Columbia University, New York, NY 10027, USA.
Journal of the American Chemical Society
|December 11, 2003
概括
我们使用密度函数计算来探索纳米晶体 (SiNCs). 不同的表面被动化方法和兴奋剂显著改变了它们的电子和光学特性,偏离了简单的量子尺寸效应.
科学领域:
- 计算材料科学科学 计算材料科学
- 纳米科学和纳米技术
- 量子化学 是一个量子化学.
背景情况:
- 纳米晶体 (SiNCs) 呈现量子封闭效应,影响其电子和光学性能.
- 表面被动化对于稳定SiNC和调整它们的行为至关重要.
- 了解SiNC中的兴奋剂对于其在电子领域的应用至关重要.
研究的目的:
- 调查各种表面被动化方案 (F,H,氧化物,) 对SiNCs的影响.
- 预测被动化对最高占有分子轨道 (HOMO),最低不占有分子轨道 (LUMO),光学光谱和电子转移的影响.
- 通过使用杂质原子 (Al,P) 在量子受限SiNC中探索电.
主要方法:
- 使用了静态和时间依赖的密度函数计算 (DFT).
- 对SiNC进行了几何优化和全电子计算,最高为Si(87) H(76).
- 电子阴性比较被用来分析从量子尺寸效应模型的偏差.
主要成果:
- 不同的sp(3) 被动化方案 (F,H,氧化物,) 显著改变HOMO,LUMO和SiNCs的光学光谱.
- 电子阴性差异解释了与标准量子大小效应的偏差.
- 在表面和内部的 (Al) 和 (P) 兴奋剂中,研究了电气兴奋剂效应.
结论:
- 表面被动化策略极大地影响了纳米晶体的电子和光学特性.
- 用像P这样的杂质原子进行兴奋剂使量子受限SiNCs中的电修饰成为可能.
- 表面悬挂的键可以与多邦电子相互作用,促进内部电荷转移.
更多相关视频
06:54Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model
Published on: August 22, 2015
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
相关概念视频
Energy Bands in Solids
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Types of Semiconductors
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
