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一种新的热电材料:CsBi4Te6

Duck-Young Chung1, Tim P Hogan, Melissa Rocci-Lane

  • 1Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824, USA.

Journal of the American Chemical Society
|May 20, 2004
PubMed
概括

bismuth telluride (CsBi4Te6) 是一种狭间隙半导体. 兴奋剂优化其热电特性用于低温应用,SbI3和Sb兴奋剂显示出有希望的结果.

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