纳米线晶体管的电荷储存行为与bis () -Fe (II) 分子功能化:依赖分子结构
Chao Li1, Wendy Fan, Daniel A Straus
1Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035, USA.
Journal of the American Chemical Society
|June 24, 2004
概括
双胺-铁二分子显著增强纳米线晶体管的电荷存储. 带结构,特别是酸盐头组和长度,改善了保留时间和电压稳定性,通过化学合成展示了定制的设备特性.
科学领域:
- 分子工程分子工程分子工程
- 纳米电子产品的电子产品
- 材料科学 材料科学 材料科学
背景情况:
- 氧化纳米线对于晶体管导通道至关重要.
- 双甲) - 铁 (II) 复合体提供可调节的电子特性.
- 控制纳米线晶体管中的电荷存储是先进存储器件的关键.
研究的目的:
- 调查 bis ((terpyridine) -Fe ((II) 分子结构对纳米线晶体管电荷存储的影响.
- 为了将连接物修饰与电荷保留时间和值电压转移相关联.
- 在真空条件下评估内存特征的稳定性.
主要方法:
- 三个具有不同配体 (H,SAc,4-phenyl-SAc) 的 bis(terpyridine) -Fe(II) 分子的合成.
- 在氧化物纳米线表面上组装分子,以形成晶体管装置.
- 在不同的条件下进行电气表征,包括I-Vg曲线和保留测量.
主要成果:
- 电荷储存特征 (保持时间和值电压转移) 随着连接体复杂度的增加而得到改善 (1 < 2 < 3).
- 保持时间从200秒到287小时不等,门电压从4.8V转移到28V.
- 具有更复杂的连接体的器件在真空下表现出增强的歇斯底里稳定性,表明电荷保留的改善.
结论:
- 硫酸盐头组和较长的连接体长度增加了电荷道障碍,导致电荷保留时间较长.
- 化学合成为设计具有量身定制记忆特性的纳米线晶体管提供了一条途径.
- 该研究强调了分子设计在开发稳定高效的纳米线记忆器件方面的潜力.
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