相关实验视频
Updated: Jul 29, 2026
07:51
Fabrication of Silica Ultra High Quality Factor Microresonators
Published on: July 2, 2012
超高质量的碳化单晶
Daisuke Nakamura1, Itaru Gunjishima, Satoshi Yamaguchi
1Toyota Central R&D Laboratories, Inc., Nagakute, Aichi, 480-1192, Japan.
Nature
|August 27, 2004
概括
一种新方法显著减少了碳化 (SiC) 晶体中的失位,为高效的SiC电子设备铺平了道路,并减少了电气系统中的能量损失.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体技术 半导体技术
背景情况:
- 碳化 (SiC) 具有用于先进电子设备的理想特性.
- 目前的SiC晶体生长方法已经减少了宏观缺陷,但仍然含有显著的基本失位.
- 这些剩余的位移阻碍了高效和可靠的SiC电子设备的开发.
研究的目的:
- 开发一种新的方法来降低SiC单晶体中的脱位密度.
- 为了使几乎没有脱位的SiC基板能够制造.
- 为了促进高功率SiC电子设备的发展.
主要方法:
- 灵感来自于在SiC中观察到的异位结构,垂直于c轴 (a-face增长).
- 实施了一种新的生长技术,以最大限度地减少SiC单晶体中的脱位形成和传播.
主要成果:
- 在SiC单晶中减少了元素位移的密度,大小为两到三级.
- 实现几乎没有脱位的SiC基板.
- 与传统方法相比,显示了晶体质量的显著改善.
结论:
- 开发的方法为生产高质量,低位移的SiC基板提供了一条途径.
- 这些基板对于实现高性能SiC电子设备至关重要.
- 这一进步有望在未来使用SiC技术的电气系统中减少能源损失.
相关概念视频
01:26Imperfections in Crystal Structure: Stoichiometric Point Defects
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
01:29Imperfections in Crystal Structure: Non-Stoichiometric Defects
Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...