Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关实验视频

Updated: Jun 23, 2026

Fabrication of Silica Ultra High Quality Factor Microresonators
07:51

Fabrication of Silica Ultra High Quality Factor Microresonators

Published on: July 2, 2012

超高质量的碳化单晶.

Daisuke Nakamura1, Itaru Gunjishima, Satoshi Yamaguchi

  • 1Toyota Central R&D Laboratories, Inc., Nagakute, Aichi, 480-1192, Japan.

Nature
|August 27, 2004
PubMed
概括

一种新方法显著减少了碳化 (SiC) 晶体中的失位,为高效的SiC电子设备铺平了道路,并减少了电气系统中的能量损失.

相关概念视频

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Complementary Prognostic Value of ALBI Grade and Child-Pugh Classification in HCC Treated With SBRT.

Anticancer research·2026
Same author

Intrafractional variation of breath-hold radiotherapy for gastric lymphoma.

Radiation oncology (London, England)·2026
Same author

Coronary intimal proliferation despite lipid reduction during the first year after heart transplantation.

Heart and vessels·2026
Same author

Scale-Dependent Attraction of Invasive Raccoons to Bait Sites: Behavioural and Proximity Responses in a Post-Disaster Agricultural Landscape.

Ecology and evolution·2026
Same author

Drug-coated versus conventional balloons for side branch treatment in coronary bifurcation lesions: an optical coherence tomography substudy of the OCVC-BIF randomised trial.

EuroIntervention : journal of EuroPCR in collaboration with the Working Group on Interventional Cardiology of the European Society of Cardiology·2026
Same author

Vaccine-Induced Anti-HBs Response is Associated with Protection Against Hepatitis B Virus Reactivation after Allogeneic Hematopoietic Cell Transplantation: A Randomized Trial.

Transplantation and cellular therapy·2026

科学领域:

  • 材料科学 材料科学 材料科学
  • 固态物理 固态物理
  • 半导体技术 半导体技术

背景情况:

  • 碳化 (SiC) 具有用于先进电子设备的理想特性.
  • 目前的SiC晶体生长方法已经减少了宏观缺陷,但仍然含有显著的基本失位.
  • 这些剩余的位移阻碍了高效和可靠的SiC电子设备的开发.

研究的目的:

  • 开发一种新的方法来降低SiC单晶体中的脱位密度.
  • 为了使几乎没有脱位的SiC基板能够制造.
  • 为了促进高功率SiC电子设备的发展.

主要方法:

  • 灵感来自于在SiC中观察到的异位结构,垂直于c轴 (a-face增长).
  • 实施了一种新的生长技术,以最大限度地减少SiC单晶体中的脱位形成和传播.

主要成果:

  • 在SiC单晶中减少了元素位移的密度,大小为两到三级.
  • 实现几乎没有脱位的SiC基板.
  • 与传统方法相比,显示了晶体质量的显著改善.

结论:

  • 开发的方法为生产高质量,低位移的SiC基板提供了一条途径.
  • 这些基板对于实现高性能SiC电子设备至关重要.
  • 这一进步有望在未来使用SiC技术的电气系统中减少能源损失.

更多相关视频

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Fabrication and Optimization of Type II Silicon Clathrate Films
06:53

Fabrication and Optimization of Type II Silicon Clathrate Films

Published on: October 14, 2025

相关实验视频

Last Updated: Jun 23, 2026

Fabrication of Silica Ultra High Quality Factor Microresonators
07:51

Fabrication of Silica Ultra High Quality Factor Microresonators

Published on: July 2, 2012

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Fabrication and Optimization of Type II Silicon Clathrate Films
06:53

Fabrication and Optimization of Type II Silicon Clathrate Films

Published on: October 14, 2025