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纳米线的表面化学和电气性能

Dunwei Wang1, Ying-Lan Chang, Qian Wang

  • 1Contribution from the Department of Chemistry, Stanford University, Stanford, CA 94305, USA.

Journal of the American Chemical Society
|September 16, 2004
PubMed
概括

表面化学显著影响纳米线 (GeNW) 晶体管. 使用HfO2通过化或被动化去除表面氧化物,可以消除歇斯底里,提高设备性能.

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Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...