Y K Kato1, R C Myers, A C Gossard

  • 1Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106, USA.

Science (New York, N.Y.)
|November 13, 2004
PubMed
概括

使用克尔旋转显微镜观察到半导体通道边缘的电子自旋偏振,证实了自旋霍尔效应. 发现应变会改变自旋积累,这表明外部自旋霍尔效应机制.