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Updated: Aug 17, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
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Published on: June 18, 2013

在金属纳米管内通过电化学沉积制造纳米电缆

Jie-Ren Ku1, Ruxandra Vidu, Raisa Talroze

  • 1Department of Chemical Engineering and Materials Science, University of California, Davis, One Shields Avenue, Davis, California 95616, USA.

Journal of the American Chemical Society
|November 19, 2004
PubMed
概括

研究人员开发了一种新方法来制造金- (Au-Te) 纳米电缆. 这种技术使用纳米孔膜来引导精确的黄金和沉积,形成同轴纳米结构.

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...