相关实验视频
Updated: Jul 9, 2026

11:57
Fabricating Metamaterials Using the Fiber Drawing Method
Published on: October 18, 2012
用于太赫兹波导的金属线
Kanglin Wang1, Daniel M Mittleman
1Department of Electrical and Computer Engineering, MS 366, Rice University, Houston, Texas 77251-1892, USA.
Nature
|November 19, 2004
概括
研究人员开发了一种简单的赤裸金属线波导,用于高效的太赫兹 (THz) 脉冲传输. 这种新的系统提供了低损耗和最小的分散,使得新的THz应用,如内镜.
科学领域:
- 光学和光子学 在光学和光子学.
- 电磁主义 电磁主义
- 材料科学 材料科学 材料科学
背景情况:
- 太赫兹 (THz) 辐射 (0.110 THz) 在传感,成像和光谱学中具有多种应用.
- 现有的波导 (微波金属,光学介电) 由于高损耗和分散,不适合THz.
- 有效的波导对于推进THz技术至关重要.
研究的目的:
- 研究一种简单有效的指导太赫兹 (THz) 辐射的方法.
- 为了克服THz应用中传统波导的局限性.
- 展示一种新的波导结构,用于低损耗,低分散的THz脉冲传输.
主要方法:
- 使用裸体金属线作为太赫兹 (THz) 脉冲的波导.
- 描述了传输特性,包括衰减和分散.
- 开发了一种使用金属线波导的太赫兹内镜.
主要成果:
- 裸体金属线波导几乎没有显示THz脉冲的分散.
- 实现了低衰减,使得远距离THz波传输成为可能.
- 成功展示了基于这种波导的功能性太赫兹内镜.
结论:
- 裸体金属电线是一种简单但非常有效的波导,用于太赫兹 (THz) 辐射.
- 这种方法克服了THz波导的重大挑战,提供了低损失和分散.
- 展示的太赫兹内镜凸显了这种新的波导结构的实际潜力.
相关概念视频
Magnetic Field Due To A Thin Straight Wire
Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.
Magnetic Field Due to Two Straight Wires
Consider two parallel straight wires carrying a current of 10 A and 20 A in the same direction and separated by a distance of 20 cm. Calculate the magnetic field at a point "P2", midway between the wires. Also, evaluate the magnetic field when the direction of the current is reversed in the second wire.
Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

