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在室温单分子晶体管的电流中进行大门调制

Bingqian Xu¹, Xiaoyin Xiao, Xiaomei Yang

¹The Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287, USA.

Journal of the American Chemical Society

|February 24, 2005

概括

研究人员使用氧化还原分子创建了一个单分子场效应晶体管 (FET). 应用门电压通过使电子通过分子能量水平运输显著增加了电流.

科学领域:

分子电子学分子电子学
纳米尺度设备的使用.
有机半导体有机半导体

背景情况:

单分子电子技术为小型化设备提供了一条途径.
在分子层面控制电荷传输对于设备的功能至关重要.
反氧活性分子可以表现出可调节的电子性质.

研究的目的:

为了展示一个功能性的单分子场效应晶体管 (FET).
为了研究门电压对 redox 分子中电荷传输的影响.
了解分子FET电流调节背后的机制.

主要方法:

使用与源电极和排水电极共同结合的烯四碳酸二胺分子制造FET.
集成一个电化学门来控制分子能量水平.
测量源-排水电流作为门电压的函数.

主要成果:

证明了一个具有n型晶体管特征的单分子FET.
观察到源-排水电流增加了近3个数量级.
将当前的增加与分子能量水平与费米水平的调整相关联.

结论:

对分子能量水平的门电压控制对于单分子FETs中调节电流是有效的.
当与费米水平对齐时,电子运输由最低的空分子能量水平介导.
这项工作突出了氧化还原分子在分子电子和FET应用中的潜力.

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