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在有机半导体中对n型场效应行为的一般观察

Lay-Lay Chua¹, Jana Zaumseil, Jui-Fen Chang

¹Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK.

|March 11, 2005

概括

研究人员在有机半导体中通过使用无基无门介电器实现了n型导电. 这一突破克服了电子陷问题,使先进的有机电子学能够实现更高的电子流动性.

科学领域:

材料科学材料科学材料科学
有机电子有机电子
半导体物理半导体物理

背景情况:

有机半导体对于显示器和可打印电路等新兴应用至关重要.
通常,有机场效应晶体管 (FET) 由于强大的电子捕获而表现出 p 型导电,限制了 n 型性能.
现有的n型有机半导体很少见,通常需要特定的高电子亲和度或低带隙材料.

研究的目的:

为了证明n通道场效应晶体管 (FET) 传导在更广泛的合聚合物中.
确定在有机FET中实现n型导电的历史困难的主要原因.
为了使有机互补金属氧化物半导体 (CMOS) 电路的发展.

主要方法:

使用了一种无基门介电器,具体来说是一种二四甲西洛二基基衍生物 (BCB).
使用各种结合聚合物与新介电器制造和表征有机FET.
研究了半导体-介电接口上的电子捕获机制.

主要成果:

在使用BCB介电器的大多数合聚合物中实现了n通道FET导电.
测量了聚烯共聚合物和基替代聚 ((p-乙烯乙烯)) 中显著的电子流动性 (10^-3 到 10^-2 cm^2 V^-1 s^-1).
在传统的SiO2介电材料上确定了基组 (西兰醇) 作为电子捕获的主要原因.

结论:

使用无基门介电剂是解锁有机半导体中n型导电的关键.
在这些材料中,电子的移动性比以前的假设要高.
这项研究为实际的有机CMOS电路铺平了道路,可以利用p型和n型功能.

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