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Updated: Jul 13, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
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Published on: December 7, 2015

化和BN纳米管的电导率

Chengchun Tang1, Yoshio Bando, Yang Huang

  • 1Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. tang.chengchun@nims.go.jp

Journal of the American Chemical Society
|May 5, 2005
PubMed
概括

化将绝缘化 (BN) 纳米管转化为半导体. 这一过程还产生了化的曲BN片,改变了它们的电子特性.

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