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Updated: Aug 15, 2026

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n型有机场效应晶体管具有非常高的电子流动性,基于含三甲基基的 thiazole oligomers

Shinji Ando1, Ryo Murakami, Jun-ichi Nishida

  • 1Department of Electronic Chemistry, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8502, Japan.

Journal of the American Chemical Society
|October 27, 2005
PubMed
概括

具有三甲基基的新型 thiazole 和 co-oligomers 在有机场效应晶体管 (OFET) 中充当高性能 n 型半导体. 乙醇衍生物达到1.83cm2/Vs的高电子流动性,显示出出色的n型半导体性能.

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