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在纳米尺度的在绝缘体膜中的电子运输
Pengpeng Zhang1, Emma Tevaarwerk, Byoung-Nam Park
1University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
Nature
|February 10, 2006
概括
薄在绝缘体 (SOI) 层表现出独特的电子特性. 在纳米尺度SOI中的导电由表面/接口状态控制,而不是散装剂,使高流动性载体成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 在绝缘体上 (SOI) 是一种广泛使用的半导体材料.
- 在SOI中稀释层会改变其体积特性.
- 了解薄SOI中的电子行为对于微电子设备至关重要.
研究的目的:
- 为了研究电子传导机制在薄 (001) 导向的SOI.
- 确定控制纳米尺度SOI载体移动性的因素.
- 探索在超薄层中导电的可能性.
主要方法:
- 扫描道显微镜 (STM) 用于表面分析.
- 电子运输测量以评估导电性.
- 理论建模以了解电子相互作用.
主要成果:
- 在薄 SOI ((001) 中的电子导电主要由表面/接口状态主导.
- 这些状态与层的带结构相互作用.
- 高流动性载体导电在纳米尺度SOI中实现.
结论:
- 散装剂不是薄SOI传导的主要决定因素.
- 表面和接口状态使载体激发和导电成为可能.
- 在超薄Si ((001) 中进行导电是可行的,而不依赖于散装剂,只要有适当的表面/接口条件.
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