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Published on: November 11, 2013
化纳米线和纳米螺旋具有记忆切换行为
1Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, USA.
Journal of the American Chemical Society
|June 22, 2006
概括
研究人员合成了 telluride (GeTe) 纳米线和纳米螺旋. 这些结构显示出创造电驱动非挥发性内存设备的潜力,因为它们具有改变电阻的特性.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 固态物理 固态物理
背景情况:
- 半导体纳米线对于先进的电子设备至关重要.
- telluride (GeTe) 是一种具有记忆潜力的相变材料.
研究的目的:
- 为了合成单晶GeTe纳米线 (NW) 和纳米螺旋体 (NH).
- 为了研究它们的结构性质.
- 探索它们在非易失性内存应用中的潜力.
主要方法:
- 用金属催化剂进行合成的蒸汽运输方法.
- 电子显微镜和衍射用于结构特征.
- 制造包含个别GeTe NWs的设备.
主要成果:
- 成功合成了单晶GeTe的NWs和NHs.
- 北北:直径65±20nm,长度高达50μm.
- NHs:直径135±30纳米,音调可变.
- 观测到的圆柱体晶体结构.
- 在基于NW的设备中证明了非挥发性阻力变化.
结论:
- GeTe NWs 和 NHs 在受控的形态和结晶性下成功合成.
- 观察到的电压驱动的晶体-无形转换证实了它们对非挥发性记忆的潜力.
- 这些发现为基于GeTe的纳米级记忆器件铺平了道路.
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