门介电化学结构-有机场效应晶体管性能相关性对于电子,孔和双极的有机半导体
Myung-Han Yoon1, Choongik Kim, Antonio Facchetti
1Department of Chemistry and the Materials Research Center, Northwestern University 2145 Sheridan Road, Evanston, IL 60208, USA.
Journal of the American Chemical Society
|September 28, 2006
概括
这项研究调查了有机场效应晶体管 (OFET) 的性能,该研究揭示了介电表面化学显著影响对空气敏感的n型半导体. 非极性聚烯涂层通过最小化半导体-介电接口的电子捕获来提高移动性.
科学领域:
- 材料科学 材料科学 材料科学
- 有机电子 有机电子
- 半导体物理 半导体物理
背景情况:
- 有机场效应晶体管 (OFET) 对于灵活的电子产品至关重要.
- 半导体 - 介电接口的化学成分对 OFET 的性能产生了深远的影响.
- 了解这些界面效应是优化设备特性的关键.
研究的目的:
- 开发一种通用方法来探测半导体-介电界面化学对OFET性能的影响.
- 研究双层门介电物如何影响有机半导体中的电荷传输.
- 根据接口属性,识别OFET中的移动性变化的来源.
主要方法:
- 使用六种不同的双层介电结构 (聚合物/HMDS在SiO(2) /Si) 制造OFET.
- 使用原子力显微镜 (AFM),扫描电子显微镜 (SEM) 和广角X射线衍射 (WAXRD) 进行有机半导体薄膜的表征.
- 制造的晶体管的电气特性,以确定性能参数,如移动性.
主要成果:
- 介电表面的修改显著改变了对空气敏感的n型半导体的性能,而对空气稳定的n型和p型半导体的变化很小.
- 在SiO(2) 上的非极性聚烯涂层提高了对空气敏感的n型半导体的可移动性,直至2cm(2) / V s).
- 由于界面上的西拉诺和碳功能导致的电子捕获被确定为n型半导体中移动性敏感性的主要原因.
结论:
- 双门介电介电提供了一个多功能平台,通过控制接口化学来调整OFET性能.
- 通过适当的介电表面修改来最大限度地减少电子捕获对于提高对空气敏感的n型有机半导体的移动性至关重要.
- 基于烯的n型半导体作为有效的探测器,用于研究TFT性能和半导体-介电接口特性之间的关系.
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