高性能低成本有机场效应晶体管与化学修饰的底部电极
Chong-an Di1, Gui Yu, Yunqi Liu
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P.R. China.
Journal of the American Chemical Society
|December 21, 2006
概括
用Ag-TCNQ化学修改银电极显著增强有机场效应晶体管 (OFET). 这种低成本的方法提高了电气性能,使它们与昂贵的黄金接触器件相提并论.
科学领域:
- 材料科学 材料科学 材料科学
- 有机电子 有机电子
- 设备物理 设备物理
背景情况:
- 有机场效应晶体管 (OFET) 对于灵活的电子产品至关重要.
- 底部接触电极配置往往受到高接触电阻和能量水平不匹配的影响.
- 银 (Ag) 和铜 (Cu) 是具有成本效益的电极材料,但在OFET性能方面存在挑战.
研究的目的:
- 为了提高底接触有机场效应晶体管 (OFET) 的性能.
- 为了解决基于Ag的电极中的接触电阻和能量不匹配问题.
- 为OFET电极开发一种低成本的化学修饰方法.
主要方法:
- 使用简单的溶液方法对Ag或Cu源-排水电极进行化学修改.
- 用Ag-TCNQ (7,7,8,8-四亚诺基诺二甲) 对底部接触电极的表面处理.
- 用修改过的电极制造和表征基于五烯的OFET.
主要成果:
- 用Ag-TCNQ修改的Ag电极中消除了接触电阻和能量不匹配.
- 带有Ag-TCNQ修饰的Ag电极的五烯OFET表现出了出色的电性能.
- 性能与使用昂贵的金 (Au) 顶接触电极的设备相提并论.
结论:
- 用Ag-TCNQ对Ag电极进行化学改造是高性能OFET的有效策略.
- 这种方法为制造高性能底接触OFET提供了一种新的,低成本的方法.
- 这些发现为先进的有机电子设备的商业可行性铺平了道路.
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