一个交替的pi堆叠的bisdithiazolyl基导体导体
Alicea A Leitch1, Robert W Reed, Craig M Robertson
1Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Journal of the American Chemical Society
|June 5, 2007
概括
一个新的合成路径创建了一个共振稳定型酸桥 bisdithiazolyl 框架. 这种N-甲基基因表现出温度依赖的结构变化和激活导电性,受到压力显著增强.
科学领域:
- 材料科学 材料科学 材料科学
- 有机化学 有机化学
- 固态物理 固态物理
背景情况:
- 开发电子应用的新型有机框架.
- 了解根系中的结构-属性关系.
- 研究pi堆叠有机材料的导电性.
研究的目的:
- 为了建立一个一般的合成路线为pyrazine-bridged bisdithiazolyl框架.
- 为了合成和表征一种新型的N-甲基bisdithiazolyl基.
- 为了研究取决于温度的基的结构,电子和导电性质.
主要方法:
- 为了合成,还原性降解保护和循环.
- 电子偏磁共振 (EPR) 光谱和循环电压测量用于表征.
- 可变温度X射线晶体学,扩展的赫克尔理论计算,磁感应度和单晶导电性测量.
主要成果:
- 成功合成了N-甲基bisdithiazolyl基.成功合成了N-甲基bisdithiazolyl基.
- 观察到影响pi堆叠和带间隙的温度依赖相位过渡.
- 激活导电性 (0.001 S cm-1 在295 K,Eact=0.19 eV) 显著增强的压力 (5 GPa 的 3 个数量级).
结论:
- 开发的合成途径为新一类有机基质材料提供了访问权限.
- 该材料具有独特的结构和电子特性,受温度和压力的影响.
- 压力诱导的导电性增强突出了有机电子设备应用的潜力.
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