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相关概念视频

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Band Theory02:35

Band Theory

When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Molecular and Ionic Solids02:54

Molecular and Ionic Solids

Crystalline solids are divided into four types: molecular, ionic, metallic, and covalent network based on the type of constituent units and their interparticle interactions.
Molecular Solids
Molecular crystalline solids, such as ice, sucrose (table sugar), and iodine, are solids that are composed of neutral molecules as their constituent units. These molecules are held together by weak intermolecular forces such as London dispersion forces, dipole-dipole interactions, or hydrogen bonds, which...
Energy Bands in Solids01:01

Energy Bands in Solids

Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Network Covalent Solids02:18

Network Covalent Solids

Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...

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相关实验视频

Updated: Jul 12, 2026

Solid-state Graft Copolymer Electrolytes for Lithium Battery Applications
05:33

Solid-state Graft Copolymer Electrolytes for Lithium Battery Applications

Published on: August 12, 2013

固态电子的化学结构

E Yablonovitch

    Science (New York, N.Y.)
    |October 20, 1989
    PubMed
    概括

    控制表面和接口的化学键是固态电子的关键. 在,和甲-甲的发现推动了进步,尽管未来的影响仍然不确定.

    科学领域:

    • 固态物理和化学 固态物理和化学
    • 材料科学是一种材料科学.
    • 半导体设备工程 半导体设备工程

    背景情况:

    • 半导体设备的功能依赖于精确控制表面和接口的化学结合.
    • 固态电子的历史进步与理解和操纵这些结构的进步有关.
    • 接口上的缺陷化学键可能会阻碍设备的性能.

    研究的目的:

    • 审查化学发现在推进固态电子技术中的作用.
    • 检查表面和接口科学对半导体技术的影响.
    • 提供关于当前研究未来技术影响的视角.

    主要方法:

    • 历史理论见解的审查 (巴迪恩和肖克利).
    • 关于 (Ge) 和 (Si) 表面的关键化学发现的分析.
    • 对甲-甲 (GaAs-AlAs) 接口的研究进行审查.

    主要成果:

    • 结合结构的化学控制,特别是在表面和接口,一直是固态电子进步的主要驱动力.
    • 在Ge和Si表面以及GaAs-AlAs接口上的特定发现对于当前的电子革命至关重要.
    • 许多过去发现的技术后果最初没有预见到.

    更多相关视频

    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
    10:36

    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

    Published on: April 12, 2018

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    相关实验视频

    Last Updated: Jul 12, 2026

    Solid-state Graft Copolymer Electrolytes for Lithium Battery Applications
    05:33

    Solid-state Graft Copolymer Electrolytes for Lithium Battery Applications

    Published on: August 12, 2013

    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
    10:36

    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

    Published on: April 12, 2018

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    结论:

    • 在接口结构中最大限度地减少缺陷化学键的能力是固态设备操作的基础.
    • 过去的偶然发现有显著,虽然不可预测地,先进的电子.
    • 目前的研究有可能为未来的技术进步提供潜力,需要谨慎的预测.